職稱：教授
研究所（實驗室）：信息存儲材料及器件
學習工作經曆：
2015.01-現在：6774澳门永利教授
2011.08-2012.09：美國明尼蘇達大學訪問學者
2002.03-2014.12：6774澳门永利講師，副教授
2002.09-2008.06：6774澳门永利在職博士研究生
1999.07-2001.08：新加坡國立大學碩士研究生
1996.06-1999.07華中理工大學助教
1992.09-1996.06：華中理工大學本科學習
研究方向、領域：
信息存儲材料及器件，包括磁随機存儲器材料及器件、相變随機存儲器材料及器件、半導體存儲器及器件、磁記錄介質技術等；磁性材料；功能薄膜材料
1、承擔的主要科研項目：
[1]. 非磁性GeTe/Sb2Te3超晶格薄膜及存儲單元磁阻效應及其物理機制基礎研究，84萬，國家自然科學基金面上項目（主持）
[2]. 抗熱串擾、低電流相變存儲材料與器件關鍵技術，376萬，863項目課題（主持）
[3]. 納米電流通道結構垂直磁隧道結自旋轉移磁化反轉研究，20萬，國家自然科學基金青年基金項目（主持）
[4]. 高密度相變存儲器抗熱串擾技術研究，15萬，武漢市科技計劃項目（主持）
[5]. 高***256Kb**存儲器陣列設計與實現技術，300萬，總裝預研項目
[6]. 高速、低功耗相變随機存儲器技術，450萬，863計劃重大項目課題
[7]. 高密度、低功耗電阻式相變存儲器技術研究，92萬，863計劃面上項目
[8]. 憶阻器材料及其原型器件研究，173萬，科技部國際科技合作項目
[9]. SmCo5垂直磁化膜的制備及其形成機理研究，36萬，國家自然科學基金面上項目
[10]. 相變随機存儲器功能芯片研究，100萬，湖北省重大科技攻關項目
2、已授權專利
[1]. 一種熱膨脹系數的測量方法及裝置，國家發明專利，已授權
[2]. 用于相變存儲器的矽摻雜的铋碲基存儲材料及制備方法，國家發明專利，已授權
[3] 一種非對稱相變存儲器單元及器件，國家發明專利，已授權
[4] CoPt/Ta垂直磁化膜的雙層結構材料及其制備方法，國家發明專利，已授權
3、代表性學術論文
[1] Wang S, Guan XW,Cheng XM*, Lian C, Huang T，Miao XS，Spin-wave propagation steered by electric field modulated exchange interaction，SCIENTIFIC REPORTS,6, 2016, 31783
[2] Lu B,Cheng XM*, Feng JL, Guan XW, and Miao XS, Logic gates realized by nonvolatile GeTe/Sb2Te3 super lattice phase-change memory with a magnetic field input,APPLIED PHYSICS LETTERS, Volume 109, 2016, 023506
[3] Ju C,Cheng XM*, Miao XS, Amorphization and amorphous stability of Bi2Te3 chalcogenide films,APPLIED PHYSICS LETTERS, Volume 100, 2012, 142114
[4] X. W. Guan,X. M. Cheng*, T. Huang, S. Wang, K. H. Xue, and X. S. Miao, Effect of metal-to-metal interface states on the electric-field modified magnetic anisotropy in MgO/Fe/non-magnetic metal,JOURNAL OF APPLIED PHYSICS,119, 2016, 133905
[5] Jindong Liu,Xiaomin Cheng*, Fei Tong, and Xiangshui Miao, Spin-glass behavior and anomalous magnetoresistance in ferromagnetic Ge1-xFexTe epilayer,JOURNAL OF APPLIED PHYSICS, Volume 116, 2014, 043901
[6] X. W. Guan,X. M. Cheng*, T. Huang, and X. S. Miao, Interface structure and magnetism of CoFe/A1-FePt films with perpendicular magnetic anisotropy,JOURNAL OF APPLIED PHYSICS, Volume 116, 2014, 116, 213910
[7] X.W. Guan,X. M. Cheng*, S. Wang, T. Huang, K.H. Xue,and X.S. Miao, Effect of MgO/Fe Interface Oxidation State on Electric-Field Modulation of Interfacial Magnetic Anisotropy,JOURNAL OF ELECTRONIC MATERIALS,Vol.45, No. 6, 2016, p3162-3166
[8] T.Huang,X.M.Cheng*, X.W.Guan, and X.S Miao, Effect of the Chalcogenide Element Doping on the Electronic Properties of Co2FeAl Heusler Alloys,JOURNAL OF ELECTRONIC MATERIALS,, Vol. 45, No. 2, 2016, p1028-1034
[9] N. LIU, C. JU,X.M.CHENG*, and X.S. MIAO, Surface Band Tuning of Bi2Te3 Topological Insulator Thin Films by Gas Adsorption,JOURNAL OF ELECTRONIC MATERIALS,Vol. 43, No. 9, 2014，p3105-3109
[10]F.Tong, J.D.Liu,X.M.Cheng*, J.H.Hao, G.Y.Gao, H.Tong, X.S.Miao, Lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin film,THIN SOLID FILMS, Volume 568, 2014, p70–73
[11]Jindong Liu,Xiaomin Cheng*,Fei Tong, and Xiangshui Miao, Electronic structure and metal-insulator transition in crystalline magnetic phase-change material Ge1-xFexTe,JOURNAL OF ALLOYS AND COMPOUNDS，Vol.650, 2015, 70-74
[12]Adam Abdalla Elbashir Adam,Xiaomin Cheng*, Xiawei Guan, Xiangshui Miao, Ferromagnetism modulation by phase change in Mn-doped GeTe chalcogenide magnetic materials,APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2014,117, 2115–2119
[13]T.Huang,X.M.Cheng*, X.W.Guan, and X.S Miao, Effect of Ultrathin Inserted Ag Layer on Perpendicular Magnetic Anisotropy of CoFeB Thin Film,IEEE TRANSACTIONS ON MAGNETICS,2014, VOL. 50, NO. 11, 4400904
[14]T.Huang,X.M.Cheng*,X.W.Guan, and X.S Miao, Improvement of the Half-Metallic Stability of Co2FeAl Heusler Alloys by GeTe-Doping,IEEE TRANSACTIONS ON MAGNETICS,2015, VOL. 51, NO. 11, 2600504
[15]Adam Abdalla Elbashir Adam,Xiaomin Cheng*,Xiang shui Miao, Thickness dependence and Magnetization Behavior of Mn-doped GeTe Phase Change Materials,JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS,2015, 26: 5202–5208
聯系方式：
電話：027-87793406
Email: xmcheng@mail.hust.edu.cn
辦公地點：新光電大樓D743
Xiaomin Cheng
Professor
Phone: 86-27-87793406
Email: xmcheng@mail.hust.edu.cn
Academic Areas: Information Storage Materials And Devices
Xiaomin Cheng is a Professor at the School of Integrated Circuit in Huazhong University of Science and Technology. Her research spans information storage materials and devices, including spintronic materials and devices, phase-change memory materials and devices, semiconductor memory, magnetic recording media, magnetic materials and functional thin film materials etc. She played important roles in many national, provincial and ministerial level fundings, for example, the 863 major sub-project "New storage devices," 863 project " Resistance type phase change memory technology for high density and low power consumption", Natural Science Fundation of China "optical -magnetic hybrid recording media, properties and disc research", the Natural Science Fund of China " Preparation and mechanism of SmCo5 perpendicular magnetic thin films ", the Hubei Provincial Key Scientific and Technogical Fund "Research on phase change random access memory chip" and so on. Currently, she is in charge of three projects, the Natural Science Foundation Project of China "Magnetization reversal study in the perpendicular spin torque transfer magnetic tunnel junction with nano-current channel structure ", the Natural Science Foundation Project of China “Fundamental research on the magnetoresistance effect and its physical mechanism in nonmagnetic GeTe/Sb2Te3 superlattice thin films and memory cells”; 863 sub-project “Research on the anti-thermal crosstalk, low-current phase change materials and devices”. Xiaomin Cheng has published more than 30 journal papers and has applied for 13 patents including 1 international patent.
Academic Degrees
PhD in Microelectronics and Solid Electronics, 2008, Huazhong University of Science and Technology;
Master Degree in Data Storage, 2002, National University of Singapore;
BA in Material Science, 1996, Huazhong University of Science and Technology.
Professional Experience
2015.01-Present：Professor，Huazhong University of Science and Technology
2011.08-2012.09：Visiting Scholar, University of Minnesota, USA
2009.01-2014.12：Associate Professor，Huazhong University of Science and Technology
2002.03-2008.12：Lecturer，Huazhong University of Science and Technology
1996.06-1999.07：Teaching Assistant，Huazhong University of Science and Technology
Selected Publications
[1] Wang S, Guan XW,Cheng XM*, Lian C, Huang T，Miao XS，Spin-wave propagation steered by electric field modulated exchange interaction，SCIENTIFIC REPORTS,6, 2016, 31783
[2] Lu B,Cheng XM*, Feng JL, Guan XW, and Miao XS, Logic gates realized by nonvolatile GeTe/Sb2Te3 super lattice phase-change memory with a magnetic field input,APPLIED PHYSICS LETTERS, Volume 109, 2016, 023506
[3] Ju C,Cheng XM*, Miao XS, Amorphization and amorphous stability of Bi2Te3 chalcogenide films,APPLIED PHYSICS LETTERS, Volume 100, 2012, 142114
[4] X. W. Guan,X. M. Cheng*, T. Huang, S. Wang, K. H. Xue, and X. S. Miao, Effect of metal-to-metal interface states on the electric-field modified magnetic anisotropy in MgO/Fe/non-magnetic metal,JOURNAL OF APPLIED PHYSICS,119, 2016, 133905
[5] Jindong Liu,Xiaomin Cheng*, Fei Tong, and Xiangshui Miao, Spin-glass behavior and anomalous magnetoresistance in ferromagnetic Ge1-xFexTe epilayer,JOURNAL OF APPLIED PHYSICS, Volume 116, 2014, 043901
[6] X. W. Guan,X. M. Cheng*, T. Huang, and X. S. Miao, Interface structure and magnetism of CoFe/A1-FePt films with perpendicular magnetic anisotropy,JOURNAL OF APPLIED PHYSICS, Volume 116, 2014, 116, 213910
[7] X.W. Guan,X. M. Cheng*, S. Wang, T. Huang, K.H. Xue,and X.S. Miao, Effect of MgO/Fe Interface Oxidation State on Electric-Field Modulation of Interfacial Magnetic Anisotropy,JOURNAL OF ELECTRONIC MATERIALS,Vol.45, No. 6, 2016, p3162-3166
[8] T.Huang,X.M.Cheng*, X.W.Guan, and X.S Miao, Effect of the Chalcogenide Element Doping on the Electronic Properties of Co2FeAl Heusler Alloys,JOURNAL OF ELECTRONIC MATERIALS,, Vol. 45, No. 2, 2016, p1028-1034
[9] N. LIU, C. JU,X.M.CHENG*, and X.S. MIAO, Surface Band Tuning of Bi2Te3 Topological Insulator Thin Films by Gas Adsorption,JOURNAL OF ELECTRONIC MATERIALS,Vol. 43, No. 9, 2014，p3105-3109
[10]F.Tong, J.D.Liu,X.M.Cheng*, J.H.Hao, G.Y.Gao, H.Tong, X.S.Miao, Lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin film,THIN SOLID FILMS, Volume 568, 2014, p70–73
[11]Jindong Liu,Xiaomin Cheng*,Fei Tong, and Xiangshui Miao, Electronic structure and metal-insulator transition in crystalline magnetic phase-change material Ge1-xFexTe,JOURNAL OF ALLOYS AND COMPOUNDS，Vol.650, 2015, 70-74
[12]Adam Abdalla Elbashir Adam,Xiaomin Cheng*, Xiawei Guan, Xiangshui Miao, Ferromagnetism modulation by phase change in Mn-doped GeTe chalcogenide magnetic materials,APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2014,117, 2115–2119
[13]T.Huang,X.M.Cheng*, X.W.Guan, and X.S Miao, Effect of Ultrathin Inserted Ag Layer on Perpendicular Magnetic Anisotropy of CoFeB Thin Film,IEEE TRANSACTIONS ON MAGNETICS,2014, VOL. 50, NO. 11, 4400904
[14]T.Huang,X.M.Cheng*,X.W.Guan, and X.S Miao, Improvement of the Half-Metallic Stability of Co2FeAl Heusler Alloys by GeTe-Doping,IEEE TRANSACTIONS ON MAGNETICS,2015, VOL. 51, NO. 11, 2600504
[15]Adam Abdalla Elbashir Adam,Xiaomin Cheng*,Xiang shui Miao, Thickness dependence and Magnetization Behavior of Mn-doped GeTe Phase Change Materials,JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS,2015, 26: 5202–5208
Courses Taught
· Foundation of Information Storage Technology (Undergraduate Course)
· Semiconductor Materials and Devices (All-in-English Postgraduate Course)
