個人簡介
2013年博士畢業于南京大學，2014年2月加入6774澳门永利。現任副研究員，博士生導師。主要研究方向包括基于新型半導體的先進邏輯器件、新型存儲器、感存算器件、柔性電子器件、寬禁帶半導體器件以及器件可靠性等。現主持首批“後摩爾時代新器件基礎研究”重大研究計劃（培育項目）等國基金項目3項，以及部委項目1項，作為學術骨幹參與科技部等項目2項。在Nature Nanotechnology，Science Advances, Advanced Materials，Nano Letters，ACS Nano，IEEE Electron Devices Letters等國際權威期刊發表論文40餘篇。入選2022年湖北省青年人才計劃，榮獲6774澳门永利“學術新人獎”等榮譽。
電子郵箱：xfli@hust.edu.cn
研究方向
1.先進邏輯器件
随着物聯網、雲計算、可穿戴設備、人工智能等新興信息産業走向成熟，以功耗驅動為中心的集成電路技術将迎來極大的發展。為此，必須發展基于全新原理的新技術,以滿足人類不斷增長的對信息量的需求。探索新器件技術、尋找矽材料的替代者進而延續和拓展摩爾定律成為科學界和工業界共同關注的熱點問題。新型二維半導體在極限的物理厚度下表現出優異的載流子輸運特性，對後摩爾時代微納電子器件的發展具有重大意義。目前，半導體領軍企業如英特爾、台積電以及歐洲微電子中心等均将二維半導體作為未來微納電子器件最具發展潛力的主要方向之一。
2.新型存儲器件
由于内核存儲器、主存儲器、外部存儲器之間均存在較大的讀寫速度差距,形成了制約整個系統性能的 “存儲牆”。而随着處理器速度和核數的持續增長,存儲牆對系統性能的限制愈發明顯。因此,迫切需要研制新型存儲器（鐵電存儲、磁存儲等）以滿足信息化發展對存儲設備不斷增長的高密度,低功耗和高速度的要求。
3.寬禁帶半導體器件
功率半導體芯片是超越摩爾定律的重要組成部分，制造功率半導體芯片的材料從傳統的Si向以SiC、GaN為代表的寬禁帶半導體材料發展。GaN和SiC等寬禁帶半導體具有高熱導率、高擊穿場強、高飽和電子漂移速率和高鍵合能等優點，可以滿足現代電子技術對高溫、高功率、高壓、高頻以及抗輻射等惡劣條件的新要求。
代表性論文：
(1) Xuefei Li*, Xinhang Shi, Damiano Marian, David Soriano, Teresa Cusati, Giuseppe Iannaccone, Gianluca Fiori, Qi Guo, Wenjie Zhao, Yanqing Wu. Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices. Science Advances 2023, 9, eade5706.
(2) Xinhang Shi, Xuefei Li*, Qi Guo, Min Zeng, Xin Wang, and Yanqing Wu. Ultrashort channel chemical vapor deposited bilayer WS2 field-effect transistors. Applied Physics Reviews 2023, 10, 011405.
(3) Xinhang Shi, Xin Wang, Shiyuan Liu, Qi Guo, Lei Sun, Xuefei Li, Ru Huang, and Yanqing Wu. High-performance bilayer WSe2 pFET with record Ids = 425 μA/μm and Gm = 100 μS/μm at Vds = -1 V by direct growth and fabrication on SiO2 Substrate, 3-7 Dec. 2022, 2022 IEEE International Electron Devices Meeting (IEDM).
(4) Xinhang Shi, Xuefei Li*, Qi Guo, Han Gao, Min Zeng, Yibo Han, Shiwei Yan, and Yanqing Wu. Improved self-heating in short-channel monolayer WS2 transistors with high-thermal conductivity BeO dielectrics. Nano Letters 2022, 22, 7667-7673.
(5) Xuefei Li*, Zhenfeng Zhang, Tingting Gao, Xinhang Shi, Chengru Gu, and Yanqing Wu. Van der Waals epitaxial trilayer MoS2 crystals for high-speed electronics. Advanced Functional Materials 2022, 32, 2208091.
(6) Xuefei Li, Zhuoqing Yu, Xiong Xiong, Tiaoyang Li, Tingting Gao, Runsheng Wang, Ru Huang and Yanqing Wu. High-speed black phosphorus field-effect transistors approaching ballistic limit. Science Advances 2019, 5, eaau3194.
(7) Xuefei Li, Jingyi Wu, Yunsheng Ye, Shengman Li, Tiaoyang Li, Xiong Xiong, Xiaole Xu, Tingting Gao, Xiaolin Xie, and Yanqing Wu. Performance and reliability improvement under high current densities in black phosphorus transistors by interface engineering. ACS Applied Materials & Interfaces 2019, 11, 1587-1594.
(8) Xuefei Li, Roberto Grassi, Sichao Li, Tiaoyang Li, Xiong Xiong, Tony Low, and Yanqing Wu. Anomalous temperature dependence in metal-black phosphorus contact. Nano Letters 2018, 18, 26-31.
(9) Xuefei Li, Xiong Xiong, Tiaoyang Li, Tingting Gao, and Yanqing Wu. Optimized transport of black phosphorus top gate transistors using alucone dielectrics. IEEE Electron Device Letters 2018, 39, 1952-1955.
(10) Xuefei Li, Tiaoyang Li, Zhenfeng Zhang, Xiong Xiong, Sichao Li, and Yanqing Wu. Tunable low-frequency noise in dual-gate MoS2 transistors. IEEE Electron Device Letters 2018, 39, 131-134.
(11) Xuefei Li, Xiong Xiong, Tiaoyang Li, Sichao Li, Zhenfeng Zhang, and Yanqing Wu. Effect of dielectric interface on the performance of MoS2 transistors. ACS Applied Materials & Interfaces 2017, 9, 44602-44608.
(12) Xuefei Li, Yuchen Du, Mengwei Si, Lingming Yang, Sichao Li, Tiaoyang Li, Xiong Xiong, Peide Ye and Yanqing Wu. Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors. Nanoscale 2016, 8, 3572-3578.
(13) Xuefei Li, Lingming Yang, Mengwei Si, Sichao Li, Mingqiang Huang, Peide Ye, and Yanqing Wu. Performance potential and limit of MoS2 transistors. Advanced Materials 2015, 27, 1547-1552.
(14) Xuefei Li, Xiaobo Lu, Tiaoyang Li, Wei Yang, Jianming Fang, Guangyu Zhang, and Yanqing Wu. Noise in graphene superlattices grown on hexagonal boron nitride. ACS Nano 2015, 9, 11382-11388.
(15) Xiong Xiong, Jiyang Kang, Shiyuan Liu, Anyu Tong, Tianyue Fu, Xuefei Li, Ru Huang, and Yanqing Wu. Nonvolatile logic and ternary content-addressable memory based on complementary black phosphorus and rhenium disulfide transistors. Advanced Materials 2022, 34, 2106321.
(16) Xiong Xiong, Anyu Tong, Xin Wang, Shiyuan Liu, Xuefei Li, Ru Huang, and Yanqing Wu. Demonstration of vertically-stacked CVD Monolayer Channels: MoS2 nanosheets GAA-FET with Ion>700 µA/µm and MoS2/WSe2 CFET, 11-16 Dec. 2021, 2021 IEEE International Electron Devices Meeting (IEDM).
(17) Xiong Xiong, Mingqiang Huang, Ben Hu, Xuefei Li, Fei Liu, Sichao Li, Mengchuan Tian, Tiaoyang Li, Jian Song, and Yanqing Wu. A transverse tunnelling field-effect transistor made from a van der Waals heterostructure. Nature Electronics 2020, 3, 106-112.
(18) Shengman Li, Chengru Gu, Xuefei Li, Ru Huang, Yanqing Wu. 10-nm channel length indium-tin-oxide transistors with Ion = 1860 μA/μm, Gm = 1050 μS/μm at Vds = 1 V with BEOL compatibility, 12-18 Dec. 2020, 2020 IEEE International Electron Devices Meeting (IEDM).
(19) Mengfei Wang, Mengchuan Tian, Zhenfeng Zhang, Shengman Li, Runsheng Wang, Chengru Gu, Xiaoyu Shan, Xiong Xiong, Xuefei Li, Ru Huang and Yanqing Wu. High performance gigahertz flexible radio frequency transistors with extreme bending conditions, 7-11 Dec. 2019, 2019 IEEE International Electron Devices Meeting (IEDM).
(20) Shengman Li, Mengchuan Tian, Chengru Gu, Runsheng Wang, Mengfei Wang, Xiong Xiong, Xuefei Li, Ru Huang and Yanqing Wu. BEOL compatible 15-nm channel length ultrathin indium-tin-oxide transistors with Ion = 970 μA/μm and On/off ratio Near 10^11 at Vds = 0.5 V, 7-11 Dec. 2019, 2019 IEEE International Electron Devices Meeting (IEDM).
(21) Shengman Li, Mengchuan Tian, Qingguo Gao, Mengfei Wang, Tiaoyang Li, Qianlan Hu, Xuefei Li, Yanqing Wu. Nanometre-thin indium tin oxide for advanced high-performance electronics. Nature Materials 2019, 18, 1091-1097.
(22) Xiong Xiong, Xuefei Li, Mingqiang Huang, Tiaoyang Li, Tingting Gao, and Yanqing Wu. High performance black phosphorus electronic and photonic devices with HfLaO dielectric. IEEE Electron Device Letters 2018, 39, 127-130.
(23) Lin Liang, Wei Li, Sichao Li, Xuefei Li, and Yanqing Wu. Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric. AIP Advances 2018, 8, 125314.
(24) Qianlan Hu, Sichao Li, Tiaoyang Li, Xin Wang, Xuefei Li and Yanqing Wu. Channel engineering of normally-off AlGaN/GaN MOS-HEMTs by atomic layer etching and high-k dielectric. IEEE Electron Device Letters 2018, 39, 1377-1380.
(25) Qingguo Gao, Zhenfeng Zhang, Xiaole Xu, Jian Song, Xuefei Li, Yanqing Wu. Scalable high performance radio frequency electronics based on large domain bilayer MoS2. Nature Communications 2018, 9, 4778.
